BY25D10ASMIG(R)

1 MBIT, 3.0V (2.7V TO 3.6V), -40

BY25D10ASMIG(R)
Part Number:
BY25D10ASMIG(R)
Product Classification:
BYTe Semiconductor
Description:
1 MBIT, 3.0V (2.7V TO 3.6V), -40
ROHS Status:
Yes
PDF:
Documents

BY25D10ASMIG(R) Specifications

Part Status:
Active
Operating Temperature:
-40°C ~ 85°C (TA)
Mounting Type:
Surface Mount
Grade:
-
Qualification:
-
Memory Type:
Non-Volatile
Memory Size:
1Mbit
Memory Organization:
128K x 8
Voltage - Supply:
2.7V ~ 3.6V
Memory Format:
FLASH
Technology:
FLASH - NOR
Access Time:
7 ns
Package / Case:
8-UFDFN Exposed Pad
Clock Frequency:
108 MHz
Memory Interface:
SPI - Dual I/O
Supplier Device Package:
8-USON (2x3)
Write Cycle Time - Word, Page:
2.4ms

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